A cardinal preserving extension making the set of points of by Moti Gitik, Itay Neeman, Dima Sinapova

By Moti Gitik, Itay Neeman, Dima Sinapova

Assuming huge cardinals we produce a forcing extension of V which preserves cardinals, doesn't upload reals, and makes the set of issues of countable V cofinality in κ+ nonstationary. carrying on with to strength extra, we receive an extension within which the set of issues of countable V cofinality in ν is nonstationary for each typical ν ≥ κ+. eventually we express that our huge cardinal assumption is perfect.

Show description

Read Online or Download A cardinal preserving extension making the set of points of countable V cofinality nonstationary PDF

Best nonfiction_1 books

Extra info for A cardinal preserving extension making the set of points of countable V cofinality nonstationary

Sample text

Soc. Symp. Proc. 337 (1994) 595-600. 39. M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein, D. Stephani, "Anisotropy of the electron Hall mobility in 4H, 6H, and 15R silicon carbide", Appl. Phys. Lett. 65(1994)3120-3122. 40. A. Schoner, "Elektrische Charakterisierung von flachen und tiefen Storstellen in 4H6H- und 15R-Siliciumkarbid", Ph. D. Thesis, University of Erlangen-Nurnberg, 1994. 41. A. L. Efros, Nguyen Van Lien, B. I. Shklovskii, "Impurity band structure in lightly doped semiconductors", J.

Semicond. 11 (1997) 1069-1070. 43. W. Gotz, A. Schoner, G. Pensl, W. J. Choyke, R. Stein, S. Leibenzeder, "Nitrogen donors in 4H-silicon carbide", J. Appl. Phys. 73 (1993) 3332-3338. 44. W. Suttrop, G. Pensl, W. J. Choyke, R. Stein, S. Leibenzeder, "Hall effect and infrared absorption measurements on nitrogen donors in 6H-silicon carbide", J. Appl. Phys. 72 (1992) 3708-3713. 45. G. Pensl, T. Dalibor, "Impurity and defect levels" in Landolt-Bornstein 41, Subvolume A2, Part p\ ed. M. Schulz, Springer, Berlin, 2003, pp.

0 . 01afsson, E. O. Sveinbjornsson, "Enhancement of inversion 40 SiC Material Properties 745 channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N20)", Mater. Sci. Forum 457-460 (2004) 1425-1428. 141. H. O. 01afsson, "Detection and removal of traps at the Si02/SiC interface", Ph. D. Thesis, Chalmers University of Technology, Goteborg, 2004. 142. K. McDonald, R. W. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, J. R. Williams, "Characterization and modeling of the nitrogen passivation of interface traps in Si02/4H-SiC", J.

Download PDF sample

Rated 4.16 of 5 – based on 13 votes